semiconductor group 4?4 sfh6315t sfh6316t SFH6343T high speed optocoupler absolute maximum ratings (continued) detector (si photodiode + transistor) supply voltage ............................................................?.5 to 30 v output voltage ..........................................................?.5 to 3 20 v output current ...................................................................... 8 ma total power dissipation (t a 70 c)................................... 100 mw package isolation test voltage between emitter and detector ............................. 2500 vac rms (refer to climate din 40046, part 2, nov. 74) pollution degree (din vde0110) .................................................2 creepage ............................................................................ 3 4 mm clearance............................................................................ 3 4 mm comparative tracking index per din iec 112/vde 0303, part 1 .......................................175 isolation resistance v io =500 v, t a =25 c, r isol (note 2) ............................. 3 10 12 w v io =500 v, t a =100 c, r isol (note 2)............................ 3 10 11 w storage temperature range.............................. ?5 c to +150 c ambient temperature range............................. ?5 c to +100 c junction temperature ..........................................................100 c soldering temperature (t=10 sec. max.) .............................260 c dip soldering: distance to seating plane 3 1.5 mm specifications subject to change. tolerance: .005 (unless otherwise noted) package dimensions in inches (mm) 40 lead coplanarity .0015 (.04) max. .015 .002 (.38 .05) .008 (.20) 7 .058 .005 (1.49 .13) .125 .005 (3.18 .13) .050 (1.27) typ. .192 .005 (4.88 .13) .004 (.10) .008 (.20) .021 (.53) 5 max. r.010 (.25) max. .020 .004 (.15 .10) 2 plcs. 1 2 3 4 8 7 6 5 v cc nc c e nc a k nc 1 2 3 4 8 7 6 5 v cc base v b c e nc a k nc sfh6315/6 sfh6343 .240 (6.10) .154 .002 (3.91 .05) .016 (.41) pin 1 .120 .002 (3.05 .05) c l sfh6315t/6t SFH6343T features surface mountable industry standard soic-8 footprint compatible with infrared vapor phase reflow and wave soldering processes isolation voltage, 2500 v rms very high common mode transient immunity: 15000 v/ m s at v cm =1500 v guaranteed (SFH6343T) high speed: 1 mb/s ttl compatible guaranteed ac and dc performance over temperature: 0 c to 70 c open collector output pin compatible with hp optocouplers sfh6315t?cpl0500 sfh6316t?cpl0501 SFH6343T?cpl0453 ? available in tape and reel (suffix t) applications line receivers logic ground isolation analog signal ground isolation replace pulse transformers description the sfh6315t/16t/43t, high speed optocouplers, each consists of a gaalas infrared emitting diode, optically coupled with an integrated photodetector and a high speed transistor. the photodetector is junction isolated from the transistor to reduce miller capacitance effects. the open collector output function allows circuit design- ers to adjust the load conditions when interfacing with different logic systems such as ttl, cmos, etc. because the SFH6343T has a faraday shield on the detector chip, it can also reject and minimize high input to output common mode transient voltages. there is no base connection, further reducing the potential electrical noise entering the package. the sfh6315t/16t/43t are packaged in industry stan- dard soic-8 packages and are suitable for surface mounting. absolute maximum ratings emitter (gaalas) reverse voltage........................................................... 3 v dc forward current................................................25 ma surge forward current ................................................1 a tp 1 m s, 300 pulses/sec. total power dissipation (t a 70 c) ........................ 45 mw ne w 10.95 this document was created with framemaker 4.0.3
semiconductor group 4?5 sfh6315t/6316t/6343t electrical characteristics over recommended temperature (t a =0 c to 70 c) unless otherwise specified. see note 6 . * all typical values at t a =25 c. figure 1. test circuit for switching times parameter sym- bol device min. typ.* max. units test conditions note input forward voltage v f 1.6 1.8 v t a =25 ci f =16 ma 1.9 input reverse current i r 0.5 10 m av r =3 v input capacitance c in 75 pf f=1 mhz, v f =0 v temperature coefficient of forward voltage ?.7 mv/ ci f =16 ma logic low supply current i ccl 100 m ai f =16 ma, v o =open, v cc =15 v logic high supply current i cch 0.001 1 m a t a =25 c i f =0 ma, v o =open, v cc =15 v 2 logic low output voltage v ol sfh6315t 0.15 0.4 v t a =25 ci o =1.1 ma i f =16 ma, v cc =4.5 v 0.5 i o =0.8 ma sfh6316t SFH6343T 0.15 0.4 v t a =25 ci o =3.0 ma 0.5 i o =2.4 ma logic high output current i oh 0.003 0.5 m a t a =25 cv o =v cc =5.5 v i f =0 ma 0.01 1 t a =25 cv o =v cc =15.0 v 50 t a =0?0 cv o =v cc =15.0 v transistor dc current gain h fe 150 v o =5 v, i o =3 ma capacitance (input-output) c i-o 0.4 pf f=1 mhz 6 current transfer ra- tio ctr sfh6315t 7 16 50 % t a =25 cv o =0.4 v i f =16 ma, v cc =4.5 v 1, 6 517 v o =0.5 v sfh6316t SFH6343T 19 35 50 % t a =25 cv o =0.4 v 15 36 v o =0.5 v d v f d t a ---------- 1 2 3 4 8 7 6 5 5 v v o t plh t phl v ol 0 i f 1.5 v 1.5 v pulse generator z o =50 w t r =5 ns i f =monitor 10% duty cycle 1/f<100 s i f r l v o c l =15pf 0.1 f +5 v r m
semiconductor group 4?6 sfh6315t/6316t/6343t switching specifications over recommended temperature (t a =0 c to 70 c), v cc =5 v, i f =16 ma unless otherwise specified. *all typical values, t a =25 c. notes 1. current transfer ratio in percent equals the ratio of output collector current (i o ) to the forward led input current (i f ) times 100. 2. device considered a two-terminal device: pins 1, 2, 3, and 4 shorted together and pins 5, 6, 7, and 8 shorted together. 3. common mode transient immunity in a logic high level is the maximum tolerable (positive) dv cm /dt on the leading edge of the com- mon mode pulse (v cm ) to assure that the output will remain in a logic high state (i.e., v o >2.0 v). common mode transient immunity in a logic low level is the maximum tolerable (negative) dvcm/dt on the trailing edge of the common mode pulse signal (v cm to assure that the output will remain in a logic low state (i.e., v o <0.8 v). 4. the 1.9 k w load represents 1 ttl unit load of 1.6 ma and the 5.6 k w pull-up resistor. 5. the 4.1 k w load represents 1 lsttl unit load of 0.36 ma and the 6.1 k w pull-up resistor. 6. a 0.1 m f bypass capacitor connected between pins 5 and 8 is recommended. figure 2. test circuit for transient immunity and typical waveforms parameter sym- bol device min. typ.* max. units test conditions fig. note propagation delay time to logic low at output t phl sfh6315t 0.5 1.5 m s t a =25 c r l =4.1 k w 1 4, 5 2.0 sfh6316t SFH6343T 0.25 0.8 t a =25 c r l =1.9 k w 1.0 propagation delay time to logic high at output t plh sfh6315t 0.5 1.5 m s t a =25 c r l =4.1 k w 1 4, 5 2.0 sfh6316t SFH6343T 0.5 0.8 t a =25 cr l =1.9 k w 1.0 common mode transient immunity at logic high level output |cm h | sfh6315t 1 kv/ m s r l =4.1 k w i f =0 ma t a =25 c v cm =10 v p-p 2 3, 4, 5 sfh6316t 1 r l =1.9 k w SFH6343T 15 30 r l =1.9 k w i f =0 ma t a =25 c v cm =1500 v p-p common mode transient immunity at logic low level output |cm l | sfh6315t 1 kv/ m s r l =4.1 k w i f =16 ma t a =25 c v cm =10 v p-p 2 3, 4, 5 sfh6316t 1 r l =1.9 k w SFH6343T 15 30 r l =1.9 k w i f =16 ma t a =25 c v cm =1500 v p-p v cm v o 5 v 0 v 90% 10% 10% t r t f switch at a: i f =0 ma switch at b: i f =16 ma 90% v ol v o 1 2 3 4 8 7 6 5 i f r l v o 0.1 f +5 v v cm pulse generator + v ff a b
semiconductor group 4?7 sfh6315t/6316t/6343t figure 3. led forward current vs. forward voltage figure 4. permissible forward led current vs. temperature figure 5. permissible power dissipation vs. temp. figure 6. output current vs. output voltage figure 7. output current (high) vs. temperature figure 8. nctr vs. if figure 9. nctr vs. temperature (sfh6316t/43t) figure 10. nctr vs. temperature (sfh6315t) 1.7 1.6 1.5 1.4 1.3 0 5 10 15 20 vf-led forward voltage if-led current in ma 25 c 75 c 0 c 100 80 60 40 20 0 0 10 20 30 ambient temperature in c i f led current in ma 100 80 60 40 20 0 0 20 40 60 80 100 120 ambient temperature in c total power in mw detector emitter 15 10 5 0 0 2 4 6 8 vo-output voltage in volts io-output current in ma if=25 ma 20 ma 15 ma 10 ma 5 ma 100 80 60 40 20 0 -20 -40 -60 10 -11 10 -10 10 -9 10 -8 10 -7 10 -6 ambient temperature in c ioh .1 .01 .001 .0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 if in ma nctr sfh6315 sfh6316/43 vcc=5v tamb=25 c 100 80 60 40 20 0 -20 -40 0.7 0.8 0.9 1.0 1.1 1.2 1.3 temperature c nctr if=10 ma if=16 ma normalized @ 16 ma vcc=5v v0=0.4v t=25 c 100 80 60 40 20 0 -20 -40 0.6 0.8 1.0 1.2 1.4 temperature in c nctr if=10 ma if=16 ma normalized @ 16 ma vo=0.4v vcc=5v tamb=25 c
|
